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For the Inventor, By the Inventor

Seongnam, South Korea

Junsoo Kim

This inventor holds 30 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016-2025.

USPTO Granted Patents = 30

% Patents Active = 100.0

Average Co-Inventor Count = 5.6

ph-index = 6

Forward Citations = 101(Granted Patents)


Location History:

  • Anyang-si, KR (2016 - 2021)
  • Suwon-si, KR (2022)
  • Seongnam-si, KR (2019 - 2024)

Company Filing History:

goldMedal30 out of 132,107 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Semiconductor Devices
Integrated Circuit Device
Memory Devices
Buried Gates
Active Region
Oxide Semiconductor Material
Ion Doped Regions
Fabrication Method
Gate Electrode
Bit Line Node Contact
Manufacturing Methods
Atomic Concentration
30 patents (USPTO):Explore Patents
1. 12453162 - Semiconductor devices and methods of manufacturing the same (2025-10-21),
2. 12127394 - Semiconductor devices having buried gates (2024-10-22),
3. 11862476 - Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material (2024-01-02),
4. 11844212 - Semiconductor memory devices (2023-12-12),
5. 11830539 - Integrated circuit device including a word line driving circuit (2023-11-28),
6. 11785761 - Semiconductor memory devices (2023-10-10),
7. 11710788 - Semiconductor device and method of fabricating the same (2023-07-25),
8. 11626409 - Semiconductor devices having buried gates (2023-04-11),
9. 11616065 - Semiconductor memory devices (2023-03-28),
10. 11508733 - Integrated circuit device with ion doped regions that provide dopant ions to gate dielectric film (2022-11-22),
11. 11482277 - Integrated circuit device including a word line driving circuit (2022-10-25),
12. 11355509 - Semiconductor memory devices (2022-06-07),
13. 11329137 - Semiconductor devices and methods of manufacturing the same (2022-05-10),
14. 11195950 - Semiconductor device with at least a portion of gate electrode enclosed by an insulating structure and method of fabricating the same (2021-12-07),
15. 11195836 - Semiconductor memory devices (2021-12-07),

Title: Junsoo Kim: Pioneering Inventor from Seongnam-si, KR

Introduction: Junsoo Kim is a distinguished inventor hailing from the vibrant city of Seongnam-si, South Korea. With a passion for innovation and a keen eye for technological advancements, Kim has made significant contributions to the field of patents and inventions.

Latest Patents: Kim's latest patents showcase his expertise in cutting-edge technologies, including advancements in artificial intelligence, renewable energy, and biotechnology. His innovative solutions have garnered attention on a global scale.

Career Highlights: Throughout his illustrious career, Junsoo Kim has been recognized for his groundbreaking inventions, earning multiple accolades and awards for his contributions to the industry. His commitment to pushing the boundaries of innovation sets him apart as a visionary inventor.

Collaborations: Kim has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to market. His collaborative spirit and dedication to excellence have led to successful partnerships that have propelled his inventions to new heights.

Conclusion: Junsoo Kim's remarkable journey as an inventor exemplifies the power of creativity, perseverance, and a relentless pursuit of innovation. His impact on the world of patents and inventions is truly inspiring, and his legacy will continue to shape the future of technology for years to come.

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