Masaru Kito

Yokohama, Japan

Masaru Kito

Average Co-Inventor Count = 4.4

ph-index = 30

Forward Citations = 4,076(Granted Patents)

Forward Citations (Not Self Cited) = 3,599(Sep 21, 2024)

DiyaCoin DiyaCoin 7.39 

Inventors with similar research interests:


Location History:

  • Tokyo, JP (2012)
  • Mei-Ken, JP (2015)
  • Mie-ken, JP (2013 - 2017)
  • Kanagawa-ken, JP (2010 - 2019)
  • Kuwana, JP (2013 - 2021)
  • Kanagawa, JP (2005 - 2022)
  • Yokohama, JP (2005 - 2024)
  • Kuwana Mie, JP (2018 - 2024)


Years Active: 2005-2025

where 'Filed Patents' based on already Granted Patents

206 patents (USPTO):

Title: Masaru Kito: Pioneering Innovator in Nonvolatile Semiconductor Memory Devices

Introduction:

Masaru Kito, a prominent inventor from Yokohama, Japan, has made significant contributions to the field of nonvolatile semiconductor memory devices. With an impressive portfolio of 200 patents, Mr. Kito's work focuses on developing novel methods for reducing chip area while improving memory performance. This article delves into his latest patents, career highlights, notable collaborations, and the impact of his innovations.

Latest Patents:

Among Mr. Kito's recent patents is the "Method for Writing Data of a First Memory Cell Transistor of a Nonvolatile Semiconductor Memory Device." This invention presents a new structure for nonvolatile semiconductor memory devices, utilizing a three-dimensional lamination of memory cells to reduce the chip area. These memory strings consist of electrically programmable memory cells connected in series, employing pillar-shaped semiconductors, insulation films, charge storage layers, and layered electrodes. By spreading the first or nth electrodes in a two-dimensional state, this novel architecture enhances performance and efficiency.

Additionally, Mr. Kito has patented the "Method for Reading Data of a First Memory Cell Transistor of a Nonvolatile Semiconductor Memory Device." This invention complements his previous patent by further improving the read functionality of the nonvolatile semiconductor memory device. The incorporation of the three-dimensional memory cell lamination and optimized electrode arrangement provides enhanced reading capabilities while continuing to reduce chip area.

Career Highlights:

Masaru Kito has worked for renowned technology companies such as Toshiba Memory Corporation (formerly known as Kabushiki Kaisha Toshiba) and Toshiba Corporation. Throughout his career, he has demonstrated a remarkable aptitude for innovation and has been instrumental in advancing nonvolatile semiconductor memory technologies. As his extensive patent portfolio indicates, Mr. Kito's contributions go beyond theoretical concepts, with a profound impact on practical implementations in the semiconductor industry.

Collaborations:

Collaboration plays a vital role in the world of innovation, and Masaru Kito has had the opportunity to work alongside esteemed colleagues who have enriched his research and inventions. Notably, his collaborations with visionaries like Hideaki Aochi and Ryota Katsumata have led to breakthroughs in nonvolatile semiconductor memory devices. Their combined efforts have pushed the boundaries of memory cell design, enabling greater efficiency and performance while reducing the physical footprint.

Conclusion:

Masaru Kito's groundbreaking inventions in nonvolatile semiconductor memory devices have significantly contributed to technological advancements in the field. With his focus on three-dimensional memory cell lamination and optimizations in electrode arrangements, Mr. Kito continues to reshape the landscape of memory storage. As he collaborates with fellow innovators and industry leaders, we can anticipate even greater developments that will shape the future of semiconductor memory technology.

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