The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Oct. 12, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yoshiaki Fukuzumi, Yokohama, JP;

Ryota Katsumata, Yokohama, JP;

Masaru Kidoh, Komae, JP;

Masaru Kito, Yokohama, JP;

Hiroyasu Tanaka, Minato-ku, JP;

Yosuke Komori, Yokohama, JP;

Megumi Ishiduki, Yokohama, JP;

Hideaki Aochi, Kawasaki, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 27/11573 (2017.01); H01L 27/11575 (2017.01); H01L 27/11578 (2017.01); H01L 27/105 (2006.01); H01L 29/51 (2006.01); H01L 27/11551 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); H01L 27/1052 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 29/513 (2013.01); H01L 27/11551 (2013.01);
Abstract

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions a charge storage layer formed to surround the side surfaces of the columnar portions: and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.


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