Tokyo, Japan

Hiroyasu Tanaka

Average Co-Inventor Count = 5.6

ph-index = 30

Forward Citations = 3,774(Granted Patents)

Forward Citations (Not Self Cited) = 3,349(Sep 21, 2024)

DiyaCoin DiyaCoin 5.61 

Inventors with similar research interests:


Location History:

  • Zama, JP (2002 - 2006)
  • Kanagawa-ken, JP (2006 - 2012)
  • Yokohama, JP (2012)
  • Kanagawa, JP (2004 - 2013)
  • Mie-ken, JP (2012 - 2016)
  • Chiba, JP (2016)
  • Yokkaichi Mie, JP (2019)
  • Atsugi, JP (2010 - 2020)
  • Fuji, JP (2005 - 2021)
  • Minato, JP (2014 - 2022)
  • Mie, JP (2018 - 2022)
  • Tokyo, JP (2009 - 2024)
  • Minato-ku, JP (2010 - 2024)
  • Yokkaichi, JP (2013 - 2024)


Years Active: 2002-2025

where 'Filed Patents' based on already Granted Patents

207 patents (USPTO):

Title: Hiroyasu Tanaka: Pioneering Innovator in Semiconductor Memory Devices

Introduction:

Hiroyasu Tanaka, a prolific inventor hailing from Tokyo, Japan, has made significant contributions to the field of semiconductor memory devices. With an outstanding 193 patents to his name, Tanaka's inventive prowess has pushed the boundaries of technology and enhanced the performance of memory storage solutions. This article explores Tanaka's latest patents, career highlights, and collaborations, highlighting his invaluable contributions to the industry.

Latest Patents:

One of Tanaka's recent patents is for a semiconductor memory device and the method for its manufacturing. This invention encompasses a connecting member comprising a semiconductor material, along with a layered structure consisting of alternating electrode films and insulating films. Tanaka's design includes three or more semiconductor pillars that pierce through the layered structure and the first insulating film, providing increased connectivity. Additionally, charge storage layers are strategically placed within the device to enhance its functionality.

Another notable patent by Tanaka is for a non-volatile semiconductor storage device and its manufacturing method. This innovation involves memory strings comprising electrically rewritable memory cells connected in series. Each memory string features columnar portions, coupling portions, charge storage layers, and conductive layers. The conductive layers not only envelop the columnar portions but also serve as gate electrodes for the memory cells, resulting in improved performance and reliability.

Career Highlights:

Throughout his illustrious career, Hiroyasu Tanaka has worked with esteemed organizations such as Toshiba Corporation (formerly known as Kabushiki Kaisha Toshiba) and Jatco Corporation. Tanaka's expertise and dedication to innovation have undoubtedly played a vital role in the development of cutting-edge memory technologies.

Collaborations:

Tanaka has had the privilege of collaborating with accomplished professionals in his field. Notable coworkers include Hideaki Aochi and Ryota Katsumata, both of whom have contributed their expertise to various innovative projects alongside Tanaka. These collaborations have fostered a dynamic environment for sharing ideas and pushing the boundaries of technological advancement.

Conclusion:

Hiroyasu Tanaka's remarkable career and exemplary patent portfolio demonstrate his unwavering commitment to revolutionizing semiconductor memory devices. Through his groundbreaking inventions, Tanaka has significantly advanced the capabilities of these crucial components in modern electronics. As an inventive genius, Tanaka's contributions continue to shape the landscape of memory storage technology, ensuring faster, more efficient, and reliable devices for the future.

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