Kabushiki Kaisha Toshiba

Jatco Corporation

Nissan Motor Company Limited

Kioxia Corporation

Toshiba Memory Corporation

Mitsubishi Gas Chemical Company, Inc.

Mitsubishi Gas Chemical, Inc.

Hiroyasu Tanaka

Hideaki Aochi

Ryota Katsumata

Masaru Kito

Yoshiaki Fukuzumi

Masaru Kidoh

Megumi Ishiduki

Yosuke Komori

Yasuyuki Matsuoka

Tomoko Fujiwara

Ryouhei Kirisawa

Junya Matsunami

Takuichiro Inoue

Yoshimasa Mikajiri

Shigeto Oota

Mamiko Inoue

Mitsuru Sato

Shigeki Shimanaka

Akihiro Nitayama

Ryousuke Nonomura

Seiichiro Takahashi

Satoshi Takizawa

Masato Koga

Masatoshi Akanuma

Junya Takayama

Mitsuru Watanabe

Shinya Arai

Masahiro Yamamoto

Masaki Tsuji

Takashi Eguchi

Jouji Seki

Masato Mori

Yoshihisa Kodama

Hideki Oshita

Hideshi Wakayama

Kikuo Furukawa

Youhei Ishikawa

Tomoaki Shino

Shoichi Hayakawa

Yoshihisa Iwata

Tatsuo Wakahara

Masahide Ito

Hideaki Suzuki

Hiroshi Horikoshi

Tatsuo Ochiai

Tateki Jozaki

Tomoo Hishida

Kiyotaro Itagaki

Yasutaka Kawamura

Hiroyuki Tanagi

Masaru Kido

Takashi Maeda

Mitsuhiro Noguchi

Takayuki Suzuki

Shinichi Watanabe

Hiroki Iwasa

Yusuke Kimura

Shigeru Ishii

Yoshinobu Kawamoto

Hirofumi Okahara

Toshiji Iida

Midori Yamaguchi

Hitoshi Ito

Yoshio Nishimura

Shingo Nakajima

Katsumi Doihara

Seiji Kasahara

Makoto Komatsu

Takashi Koguchi

Toshimitsu Araki

Hironobu Waki

Yoshio Ozawa

Masaki Watanabe

Masahiro Iriyama

Hideharu Yamamoto

Keichi Tatewaki

Masao Iwase

Tetsuya Izumi

Hironori Miyaishi

Masahiro Hamano

Noritaka Aoyama

Akito Suzuki

Hisao Nobu

Koji Dohi

Kousuke Waku

Kosuke Abe

Ken Okahara

Takuji Kuniya

Kouji Saitou

Kenichi Gotou

Fumito Shinohara

Toshiaki Noda

Jihoon Kang

Ming Hu

Tetsuya Shimada

Shin Tsukamoto

Aki Hayakawa

Azusa Shimoda

Takashi Hara

Yutaka Tohyama

A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

Nonvolatile semiconductor memory device and manufacturing method thereof

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Nonvolatile semiconductor memory device and method for manufacturing same

According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.

Nonvolatile semiconductor memory device and method for driving same

A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

Semiconductor memory device and method for manufacturing the same

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Non-volatile semiconductor storage device and method of manufacturing the same

Method for reading data of a first memory cell transistor of a nonvolatile semiconductor memory device

Method for writing data of a first memory cell transistor of a nonvolatile semiconductor memory device

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions a charge storage layer formed to surround the side surfaces of the columnar portions: and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.

Semiconductor memory device

Manufacturing method of a nonvolatile semiconductor memory device

Growing community of inventors

Tokyo, Japan

Hiroyasu Tanaka