The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jul. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eunae Cho, Seoul, KR;
Dongjin Lee, Seoul, KR;
Ji Eun Lee, Suwon-si, KR;
Kyoung-Ho Jung, Suwon-si, KR;
Dong Su Ko, Seoul, KR;
Yongsu Kim, Seongnam-si, KR;
Jiho Yoo, Suwon-si, KR;
Sung Heo, Suwon-si, KR;
Hyun Park, Suwon-si, KR;
Satoru Yamada, Seoul, KR;
Moonyoung Jeong, Suwon-si, KR;
Sungjin Kim, Suwon-si, KR;
Gyeongsu Park, Hwaseong-si, KR;
Han Jin Lim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.