Los Altos, CA, United States of America

Sandeep Nijhawan

This inventor holds 29 USPTO granted patents and 19 published patent applications, primarily in Nitride Semiconductor Technology. Top assignees: Applied Materials, Inc., Intermolecular, Inc.. Active years: 2008-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sandeep Nijhawan. Retrieved from https://idiyas.com/inventor/sandeep-nijhawan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 27.6

Average Co-Inventor Count = 4.4

ph-index = 7

Forward Citations = 342(Granted Patents)


Company Filing History:


Years Active: 2008-2018

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Areas of Expertise:
Decontamination
Electrochromic Materials
CIGS Solar Cells
Thin Films
Gallium Nitride
Optoelectronic Devices
MOCVD
Epitaxy
TFTs
Cluster Tool
Dislocation Density
Temperature Control
29 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Sandeep Nijhawan in the Patent Landscape

Introduction

Sandeep Nijhawan, based in Los Altos, California, is a notable inventor with a remarkable portfolio of 29 patents. His work primarily revolves around advancements in the field of chemical vapor deposition and the intricate processes involved in semiconductor fabrication. With a strong foundation in innovative methodologies, Nijhawan has made significant contributions that benefit the industry and enhance production efficiency.

Latest Patents

Among Sandeep Nijhawan's latest patents is a groundbreaking method for the decontamination of process chambers following in-situ cleaning. This method and apparatus focus on effectively removing deposition products from the internal surfaces of processing chambers. It integrates the use of halogen-containing gases to etch away residual deposition products while employing halogen scavenging gases to eliminate any remaining halogen. This scavenging gas is activated via electromagnetic energy, which can occur within the processing chamber or in a remote environment, ensuring optimal cleaning conditions.

Another significant patent involves the development of a multi-gas straight channel showerhead. This apparatus is utilized for chemical vapor deposition and hydride vapor phase epitaxy. In this innovative setup, metal-organic chemical vapor deposition (MOCVD) is employed to deposit Group III-nitride films on multiple substrates. By using straight channels to isolate precursor gases before they enter mixing channels, Nijhawan's invention ensures precise control over the deposition process while integrating heat exchange channels to regulate temperatures effectively.

Career Highlights

Throughout his career, Sandeep Nijhawan has had the opportunity to work with esteemed companies such as Applied Materials, Inc. and Intermolecular, Inc. His experience in these leading organizations emphasizes his expertise in the realm of semiconductor technologies and patentable innovations. Nijhawan's contributions to the development of new methodologies have been pivotal in enhancing the efficiency and effectiveness of semiconductor processing.

Collaborations

Collaboration has been a key element of Sandeep Nijhawan's work. He has worked alongside talented colleagues, including Lori D. Washington and Jacob W. Smith, who have contributed to his innovative projects and patents. These collaborations have allowed for a cross-pollination of ideas, leading to advancements in technology and furthering the field of semiconductor manufacturing.

Conclusion

Sandeep Nijhawan's work exemplifies the spirit of innovation and the pursuit of excellence in the technology sector. With his extensive patent portfolio and a focus on practical applications of his inventions, he continues to influence the landscape of semiconductor processing. His contributions not only demonstrate his personal dedication to advancing technology but also highlight the importance of collaborative efforts in driving innovation forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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