The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
May. 01, 2012
Haifan Liang, Fremont, CA (US);
Jeroen Van Duren, Palo Alto, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Haifan Liang, Fremont, CA (US);
Jeroen Van Duren, Palo Alto, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 350 C and about 450 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres. A partial selenization is performed at a temperature between about 350 C and about 450 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 450 C and about 550 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres, followed by an additional selenization step at a temperature between about 450 C and about 550 C in a Se-containing atmosphere. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile