The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Oct. 10, 2012
Applicant:

Intermolecular, Inc., San Jose, CA (US);

Inventors:

Philip Kraus, San Jose, CA (US);

Minh-Huu Le, San Jose, CA (US);

Sandeep Nijhawan, Los Altos, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
Abstract

Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include SnBiOwhere x≅0.10, ZnSnO, SnAlOwhere x≅0.18, and SnMgOwhere x≅0.16. Methods of making and using the devices are also described.


Find Patent Forward Citations

Loading…