The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jul. 14, 2014
Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
Intermolecular, Inc., San Jose, CA (US);
Jianhua Hu, Palo Alto, CA (US);
Heng-Kai Hsu, Hisnchu, TW;
Minh Huu Le, San Jose, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Teresa B. Sapirman, Mountain View, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.