The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2013

Filed:

Dec. 29, 2011
Applicants:

Philip A. Kraus, San Jose, CA (US);

Boris Borisov, Edina, MN (US);

Thai Cheng Chua, Cupertino, CA (US);

Sandeep Nijhawan, Los Altos, CA (US);

Yoga Saripalli, San Jose, CA (US);

Inventors:

Philip A. Kraus, San Jose, CA (US);

Boris Borisov, Edina, MN (US);

Thai Cheng Chua, Cupertino, CA (US);

Sandeep Nijhawan, Los Altos, CA (US);

Yoga Saripalli, San Jose, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.


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