The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Jan. 07, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jie Su, Santa Clara, CA (US);

Lori D. Washington, Union City, CA (US);

Sandeep Nijhawan, Los Altos, CA (US);

Olga Kryliouk, Sunnyvale, CA (US);

Jacob Grayson, Midland, MI (US);

Sang Won Kang, San Jose, CA (US);

Dong Hyung Lee, Yongin-Si, KR;

Hua Chung, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 9/00 (2006.01); B08B 5/00 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); C23C 16/4404 (2013.01); C23C 16/45574 (2013.01); H01L 21/67115 (2013.01);
Abstract

A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.


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