The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Apr. 23, 2014
Intermolecular, Inc., San Jose, CA (US);
Jianhua Hu, Palo Alto, CA (US);
Heng Kai Hsu, Hisnchu, TW;
Tong Ju, Santa Clara, CA (US);
Minh Huu Le, San Jose, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Teresa B. Sapirman, Mountain View, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO). ZnO and SnOmay be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.