The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Dec. 12, 2012
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Haifan Liang, Fremont, CA (US);
Sang Lee, San Jose, CA (US);
Wei Liu, Sunnyvale, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Jeroen Van Duren, Palo Alto, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 33/00 (2010.01); H01L 31/18 (2006.01); H01L 31/065 (2012.01);
U.S. Cl.
CPC ...
H01L 31/065 (2013.01); H01L 31/18 (2013.01); H01L 31/1864 (2013.01); Y02E 10/50 (2013.01);
Abstract
A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.