Tokyo, Japan

Ryuta Tsuchiya

USPTO Granted Patents = 31 

 

Average Co-Inventor Count = 3.5

ph-index = 6

Forward Citations = 155(Granted Patents)


Location History:

  • Kokubunji, JP (2003)
  • Mitaka, JP (2004 - 2006)
  • Hachioji, JP (2008 - 2011)
  • Cambridgeshire, GB (2018)
  • Tokyo, JP (2012 - 2023)

Company Filing History:


Years Active: 2003-2025

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):

Title: Exploring the Innovations of Inventor Ryuta Tsuchiya

Introduction:

Ryuta Tsuchiya, a renowned inventor hailing from Tokyo, Japan, has made significant contributions to the field of semiconductor devices through his groundbreaking innovations and patented technologies.

Latest Patents:

Among his 29 patents, Ryuta Tsuchiya's latest inventions revolve around a semiconductor device with a thin-film BOX-SOI structure. This device enables high-speed operation of logic circuits and stable operation of memory circuits by incorporating unique features such as well regions with different conductivity types for enhanced electrical separation.

Career Highlights:

Ryuta Tsuchiya's impressive career includes stints at esteemed companies such as Hitachi, Ltd. and Renesas Electronics Corporation, where he further honed his skills and expertise in semiconductor technology. His innovative mindset and technical prowess have led to the development of cutting-edge solutions in the semiconductor industry.

Collaborations:

Throughout his career, Ryuta Tsuchiya has collaborated with talented individuals such as Takashi Ishigaki and Nobuyuki Sugii. These collaborations have fostered an environment of knowledge sharing and innovation, resulting in the successful implementation of novel ideas and technologies in semiconductor devices.

Conclusion:

In conclusion, Ryuta Tsuchiya stands as a trailblazing inventor whose dedication to advancing semiconductor technology has left an indelible mark on the industry. His prolific patent portfolio and collaborative spirit exemplify his commitment to pushing the boundaries of innovation, making him a key figure in the realm of semiconductor devices.

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