The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Feb. 24, 2017
Applicant:
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Inventors:
Aleksey Andreev, Cambridgeshire, GB;
David Williams, Cambridgeshire, GB;
Ryuta Tsuchiya, Cambridgeshire, GB;
Yuji Suwa, Tokyo, JP;
Assignee:
HITACHI, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/024 (2014.01); H01L 33/06 (2010.01); H01L 33/34 (2010.01); H01L 33/64 (2010.01); H01L 31/112 (2006.01); H01L 33/00 (2010.01); G06N 99/00 (2010.01); B82Y 10/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); G06N 99/002 (2013.01); H01L 29/0649 (2013.01); H01L 31/024 (2013.01); H01L 31/028 (2013.01); H01L 31/112 (2013.01); H01L 33/0041 (2013.01); H01L 33/06 (2013.01); H01L 33/34 (2013.01); H01L 33/64 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); Y10S 977/774 (2013.01); Y10S 977/814 (2013.01); Y10S 977/933 (2013.01); Y10S 977/95 (2013.01); Y10S 977/954 (2013.01);
Abstract
A silicon-based quantum dot device () is disclosed. The device comprises a substrate () and a layer () of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (: FIG.). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.