logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9941430 B1

PDFFull Text
Date of Patent:
Apr. 10, 2018

Filed:

Feb. 24, 2017

Silicon-based quantum dot device

Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Aleksey Andreev, Cambridgeshire, GB;

David Williams, Cambridgeshire, GB;

Ryuta Tsuchiya, Cambridgeshire, GB;

Yuji Suwa, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Roy Potter

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/024 (2014.01); H01L 33/06 (2010.01); H01L 33/34 (2010.01); H01L 33/64 (2010.01); H01L 31/112 (2006.01); H01L 33/00 (2010.01); G06N 99/00 (2010.01); B82Y 10/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); G06N 99/002 (2013.01); H01L 29/0649 (2013.01); H01L 31/024 (2013.01); H01L 31/028 (2013.01); H01L 31/112 (2013.01); H01L 33/0041 (2013.01); H01L 33/06 (2013.01); H01L 33/34 (2013.01); H01L 33/64 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); Y10S 977/774 (2013.01); Y10S 977/814 (2013.01); Y10S 977/933 (2013.01); Y10S 977/95 (2013.01); Y10S 977/954 (2013.01);
Abstract

A silicon-based quantum dot device () is disclosed. The device comprises a substrate () and a layer () of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (: FIG.). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

Find Patent Forward Citations

Andreev, Aleksey. (2018). Silicon-based quantum dot device (U.S. Patent No. 9941430). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9941430

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…