The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Nov. 23, 2011
Keiji Watanabe, Kokubunji, JP;
Toshiyuki Mine, Fussa, JP;
Akio Shima, Hino, JP;
Tomoko Sekiguchi, Hino, JP;
Ryuta Tsuchiya, Tokyo, JP;
Keiji Watanabe, Kokubunji, JP;
Toshiyuki Mine, Fussa, JP;
Akio Shima, Hino, JP;
Tomoko Sekiguchi, Hino, JP;
Ryuta Tsuchiya, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In the existent method for manufacturing a solar cell, manufacture of a solar cell having a quantum well having a crystalline well layer and capable of controlling the thickness of the well layer was difficult. A quantum well having an amorphous well layer, comprising a barrier layer and an amorphous well layer is formed and then the quantum well having the amorphous well layer is annealed thereby crystallizing the amorphous well layer to form a quantum well having a crystalline well layer. By applying energy density applied to the amorphous well layer at an energy density of 1.26 J/mmor more and 28.8 J/mmor less, the crystalline well layer can be formed and the lamination structure of the quantum well can be maintained simultaneously.