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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9799734 B1

PDFFull Text
Date of Patent:
Oct. 24, 2017

Filed:

Jun. 17, 2013

Semiconductor device and manufacturing method for same, as well as power conversion device

Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Takashi Ishigaki, Tokyo, JP;

Ryuta Tsuchiya, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Benjamin Sandvik

Assistant Examiner:

Gustavo Ramallo

Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/046 (2013.01); H01L 29/0865 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66068 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/7805 (2013.01); H01L 29/7813 (2013.01); H01L 29/0696 (2013.01);
Abstract

Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the current return operation. A semiconductor device includes a hole barrier region that is provided between a second-conductivity-type body region and a first-conductivity-type epitaxial layer below a second-conductivity-type body contact region and functions as a potential barrier to a hole which flows from a source electrode to the first-conductivity-type epitaxial layer through the second-conductivity-type body contact region and the second-conductivity-type body region.

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