The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Nov. 23, 2012
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Hiroyuki Yoshimoto, Tokyo, JP;
Ryuta Tsuchiya, Tokyo, JP;
Naoki Tega, Kunitachi, JP;
Digh Hisamoto, Kokubunji, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Yuki Mori, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A trench groove is formed and a silicon oxide film is buried in the periphery of a channel region of (0001) surface 4h-SiC semiconductor element. The oxide film in the trench groove is defined in such a planar layout that a tensile strain is applied along the direction of the c-axis and a compressive strain is applied along two or more of axes on a plane perpendicular to the c-axis. For example, trench grooves buried with an oxide film may be configured to such a layout that they are in a trigonal shape surrounding the channel, or are arranged symmetrically with respect to the channel as a center when arranged discretely.