The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jan. 23, 2013
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Naoki Tega, Tokyo, JP;
Digh Hisamoto, Tokyo, JP;
Satoru Akiyama, Tokyo, JP;
Takashi Takahama, Tokyo, JP;
Tadao Morimoto, Tokyo, JP;
Ryuta Tsuchiya, Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench formed into the drift through a p-type body layerincludes an n-type resistance relaxation layercovering the bottom portion of the trench, and a p-type field relaxation layer. The p-type field relaxation layeris separated from the trench bottom portion via the resistance relaxation layer, and is wider than the resistance relaxation layer. This achieves a low ON resistance, high reliability, and high voltage resistance at the same time. By forming the field relaxation layer beneath the trench, feedback capacitance can be controlled to achieve a high switching rate and high reliability.