Tadao Morimoto

Title: Tadao Morimoto: Innovator in Silicon Carbide Semiconductor Technology

Introduction

Tadao Morimoto is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide devices. His innovative work has led to advancements that enhance the performance and reliability of semiconductor applications.

Latest Patents

Tadao Morimoto holds a patent for a silicon carbide semiconductor device and the method for producing it. This patent discloses a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. The invention features a trenched MISFET with a trench formed into the drift through a p-type body layer. It includes an n-type resistance relaxation layer covering the bottom portion of the trench, along with a p-type field relaxation layer. This design achieves low ON resistance, high reliability, and high voltage resistance simultaneously. By forming the field relaxation layer beneath the trench, feedback capacitance can be controlled, resulting in a high switching rate and enhanced reliability.

Career Highlights

Tadao Morimoto is associated with Hitachi, Ltd., where he has made significant contributions to semiconductor technology. His work has been instrumental in advancing the capabilities of silicon carbide devices, which are crucial for various high-performance applications.

Collaborations

Throughout his career, Tadao Morimoto has collaborated with notable colleagues, including Naoki Tega and Digh Hisamoto. These collaborations have fostered innovation and have contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Tadao Morimoto's contributions to silicon carbide semiconductor technology exemplify his innovative spirit and dedication to advancing the field. His patent reflects a significant step forward in achieving high-performance and reliable semiconductor devices.