The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Aug. 16, 2012
Toshiaki Iwamatsu, Tokyo, JP;
Takashi Terada, Tokyo, JP;
Hirofumi Shinohara, Tokyo, JP;
Kozo Ishikawa, Hyogo, JP;
Ryuta Tsuchiya, Tokyo, JP;
Kiyoshi Hayashi, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Takashi Terada, Tokyo, JP;
Hirofumi Shinohara, Tokyo, JP;
Kozo Ishikawa, Hyogo, JP;
Ryuta Tsuchiya, Tokyo, JP;
Kiyoshi Hayashi, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.