Kozo Ishikawa

Title: Kozo Ishikawa: Innovator in Semiconductor Technology

Introduction

Kozo Ishikawa is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and precision of semiconductor devices.

Latest Patents

One of Kozo Ishikawa's latest patents is a semiconductor device and method for manufacturing the same. The objective of this invention is to provide a semiconductor device featuring a fin-type transistor that excels in characteristics. This is achieved by forming a fin-shaped semiconductor portion and a gate electrode with high precision, addressing variations in characteristics among elements. The invention includes a fin-shaped semiconductor portion with a source region on one side and a drain region on the other. A gate electrode is formed between these regions, surrounding the fin-shaped semiconductor portion with a gate insulating film interposed. A key solution proposed is the use of a metal material or a silicide material for the gate electrode that is wet etchable.

Career Highlights

Kozo Ishikawa is currently associated with Renesas Electronics Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Throughout his career, Kozo Ishikawa has collaborated with notable colleagues, including Toshiaki Iwamatsu and Kiyoshi Hayashi. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Kozo Ishikawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices, ensuring better performance and precision in technology.