The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Aug. 31, 2010
Applicants:
Kozo Ishikawa, Itami, JP;
Masaaki Shinohara, Kanagawa, JP;
Toshiaki Iwamatsu, Kanagawa, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a technique capable of achieving improvement of the parasitic resistance in FINFETs. In the FINFET in the present invention, a sidewall is formed of a laminated film. Specifically, the sidewall is composed of a first silicon oxide film, a silicon nitride film formed over the first silicon oxide film, and a second silicon oxide film formed over the silicon nitride film. The sidewall is not formed on the side wall of a fin. Thus, in the present invention, the sidewall is formed on the side wall of a gate electrode and the sidewall is not formed on the side wall of the fin.