The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Mar. 04, 2011
Toshiaki Iwamatsu, Kanagawa, JP;
Kozo Ishikawa, Itami, JP;
Masashi Kitazawa, Kanagawa, JP;
Kiyoshi Hayashi, Kanagawa, JP;
Takahiro Maruyama, Kanagawa, JP;
Masaaki Shinohara, Kanagawa, JP;
Kenji Kawai, Kanagawa, JP;
Toshiaki Iwamatsu, Kanagawa, JP;
Kozo Ishikawa, Itami, JP;
Masashi Kitazawa, Kanagawa, JP;
Kiyoshi Hayashi, Kanagawa, JP;
Takahiro Maruyama, Kanagawa, JP;
Masaaki Shinohara, Kanagawa, JP;
Kenji Kawai, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.