The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Oct. 31, 2012
Hitachi, Ltd., Tokyo, JP;
Takashi Ishigaki, Tokyo, JP;
Ryuta Tsuchiya, Tokyo, JP;
Kazuhiro Mochizuki, Tokyo, JP;
Akihisa Terano, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device includes a nitride semiconductor stack having at least two hetero junction bodies where a first nitride semiconductor layer and a second nitride semiconductor layer having a band gap wider than that of the first nitride semiconductor layer are disposed, and includes a drain electrode and, a source electrode disposed to the nitride semiconductor stack, and gate electrodes at a position put between the drain electrode and the source electrode and disposed so as to oppose them respectively in which the drain electrode and the source electrode are disposed over the surface or on the lateral side of the nitride semiconductor stack, and the gate electrode has a first gate electrode disposed in the direction of the depth of the nitride semiconductor stack and a second gate electrode disposed in the direction of the depth of the nitride semiconductor at a depth different from the first gate electrode.