Ronald Kakoschke

This inventor holds 50 USPTO granted patents and 1 published patent application and 4 EPO patents, primarily in Semiconductor Technology (CPC class H01L). Top assignees: Infineon Technologies Ag, Siemens Aktiengesellschaft. Active years: 1991-2016.

USPTO Granted Patents = 50 (Patent Applications = 1)

% Patents Active = 38.0

EPO Patents = 4

Average Co-Inventor Count = 2.2

ph-index = 10

Forward Citations = 442(Granted Patents)

Forward Citations (Not Self Cited) = 432(Dec 10, 2025)

Inventors with similar research interests:

Location History:

M{umlaut over (u)}nchen, DE (2001)
München, DE (2001 - 2012)
Munich, DE (1991 - 2016)

Company Filing History:

45 out of 15,023

Infineon Technologies Ag

patents

5 out of 30,867

Siemens Aktiengesellschaft

patents

Years Active: 1991-2016

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Areas of Expertise:

Tunnel Field-Effect Transistor

FinFET Device

Integrated Circuit

Memory Array

Bit Line Structure

Deep Trench Isolation

Phase-Change Memory

Bipolar Transistor

Floating Gate Device

Memory Device

Carbon Allotrope

Integrated Field-Effect Transistor

50 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9390975 - Methods for producing a tunnel field-effect transistor (2016-07-12),

2. 9337047 - Semiconductor device and method of making semiconductor device (2016-05-10),

3. 9219063 - Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor (2015-12-22),

4. 9012995 - Semiconductor device including FinFET device (2015-04-21),

5. 8946037 - Methods for producing a tunnel field-effect transistor (2015-02-03),

6. 8728907 - Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor (2014-05-20),

7. 8629500 - Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor (2014-01-14),

8. 8552475 - Apparatus of memory array using FinFETs (2013-10-08),

9. 8518776 - Methods for producing a tunnel field-effect transistor (2013-08-27),

10. 8518759 - Method for producing an integrated field-effect transistor (2013-08-27),

11. 8389357 - Method of fabricating a memory device having a memory array including a plurality of memory cell transistors arranged in rows and columns (2013-03-05),

12. 8288813 - Integrated memory device having columns having multiple bit lines (2012-10-16),

13. 8258028 - Deep trench isolation structures and methods of formation thereof (2012-09-04),

14. 8199560 - Memory device comprising select gate including carbon allotrope (2012-06-12),

15. 8193059 - Bit line structure and method for the production thereof (2012-06-05),

Title: Ronald Kakoschke - Innovative Inventor from Munich

Introduction: Ronald Kakoschke is a renowned inventor based in Munich, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Ronald Kakoschke holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Ronald Kakoschke has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the world of technology.

Collaborations: Throughout his career, Ronald Kakoschke has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all his projects.

Conclusion: Ronald Kakoschke's passion for innovation and his relentless drive to create a better future through technology make him a true pioneer in the field of inventing.