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For the Inventor, By the Inventor

Munich, Germany

Ronald Kakoschke

USPTO Granted Patents = 50 


Average Co-Inventor Count = 2.2

ph-index = 9

Forward Citations = 441(Granted Patents)

Forward Citations (Not Self Cited) = 432(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • M{umlaut over (u)}nchen, DE (2001)
  • München, DE (2001 - 2012)
  • Munich, DE (1991 - 2016)

Company Filing History:

goldMedal45 out of 14,724 
 
Infineon Technologies Ag
 patents
silverMedal4 out of 30,045 
 
Siemens Aktiengesellschaft
 patents
bronzeMedal1 out of 18 
 
Siemens Aktiengesellscaft
 patents

Years Active: 1991-2016

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Areas of Expertise:
Tunnel Field-Effect Transistor
FinFET Device
Integrated Circuit Arrangement
Memory Array
Bipolar FinFET Technology
Vertical Field-Effect Transistor
Phase-Change Memory
Floating Gate Device
Deep Trench Isolation
Bit Line Structure
Memory Cell Array
Semiconductor Component
50 patents (USPTO):Explore Patents
1. 9390975 - Methods for producing a tunnel field-effect transistor (2016-07-12),
2. 9337047 - Semiconductor device and method of making semiconductor device (2016-05-10),
3. 9219063 - Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor (2015-12-22),
4. 9012995 - Semiconductor device including FinFET device (2015-04-21),
5. 8946037 - Methods for producing a tunnel field-effect transistor (2015-02-03),
6. 8728907 - Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor (2014-05-20),
7. 8629500 - Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor (2014-01-14),
8. 8552475 - Apparatus of memory array using FinFETs (2013-10-08),
9. 8518776 - Methods for producing a tunnel field-effect transistor (2013-08-27),
10. 8518759 - Method for producing an integrated field-effect transistor (2013-08-27),
11. 8389357 - Method of fabricating a memory device having a memory array including a plurality of memory cell transistors arranged in rows and columns (2013-03-05),
12. 8288813 - Integrated memory device having columns having multiple bit lines (2012-10-16),
13. 8258028 - Deep trench isolation structures and methods of formation thereof (2012-09-04),
14. 8199560 - Memory device comprising select gate including carbon allotrope (2012-06-12),
15. 8193059 - Bit line structure and method for the production thereof (2012-06-05),

Title: Ronald Kakoschke - Innovative Inventor from Munich

Introduction: Ronald Kakoschke is a renowned inventor based in Munich, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Ronald Kakoschke holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Ronald Kakoschke has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the world of technology.

Collaborations: Throughout his career, Ronald Kakoschke has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all his projects.

Conclusion: Ronald Kakoschke's passion for innovation and his relentless drive to create a better future through technology make him a true pioneer in the field of inventing.

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