The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Feb. 09, 2010
Armin Tilke, Beacon, NY (US);
Danny Pak-chum Shum, Poughkeepsie, NY (US);
Laura Pescini, Dresden, DE;
Ronald Kakoschke, Munich, DE;
Karl Robert Strenz, Dresden, DE;
Martin Stiftinger, Stockdorf, DE;
Armin Tilke, Beacon, NY (US);
Danny Pak-Chum Shum, Poughkeepsie, NY (US);
Laura Pescini, Dresden, DE;
Ronald Kakoschke, Munich, DE;
Karl Robert Strenz, Dresden, DE;
Martin Stiftinger, Stockdorf, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Deep trench isolation structures and methods of formation thereof are disclosed. Several methods of and structures for increasing the threshold voltage of a parasitic transistor formed proximate deep trench isolation structures are described, including implanting a channel stop region into the bottom surface of the deep trench isolation structures, partially filling a bottom portion of the deep trench isolation structures with an insulating material, and/or filling at least a portion of the deep trench isolation structures with a doped polysilicon material.