The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Aug. 02, 2010
Ronald Kakoschke, Munich, DE;
Ronald Kakoschke, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for fabricating a field-effect transistor is provided. The method includes forming a substrate region, forming two terminal regions at the substrate region, one terminal region being a source region and the other terminal region being a drain region, forming two electrically insulating insulating layers, which are arranged at mutually opposite sides of the substrate region and are adjoined by control regions, forming an electrically conductive connecting region, which electrically conductively connects one of the terminal regions and the substrate region the conductive connecting region comprising a metal-semiconductor compound, leveling a surface by chemical mechanical polishing after forming the control regions, etching-back the control regions after polishing, and performing a self-aligning method for forming the metal-semiconductor compound in the etched-back regions, on the substrate region, and on a terminal region.