The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 17, 2007
Applicants:
Danny Pak-chum Shum, Poughkeepsie, NY (US);
Ronald Kakoschke, Munich, DE;
John Power, Dresden, DE;
Wolfram Langheinrich, Dresden, DE;
Inventors:
Danny Pak-Chum Shum, Poughkeepsie, NY (US);
Ronald Kakoschke, Munich, DE;
John Power, Dresden, DE;
Wolfram Langheinrich, Dresden, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/105 (2013.01); H01L 27/11526 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract
One or more embodiments are related to a semiconductor device, comprising: a high-K dielectric material; and a nitrogen-doped silicon material disposed over said high-k dielectric material.