The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Dec. 09, 2005
Juergen Holz, Dresden, DE;
Ronald Kakoschke, Munich, DE;
Thomas Nirschl, Essex Junction, VT (US);
Christian Pacha, Munich, DE;
Klaus Schruefer, Baldham, DE;
Thomas Schulz, Heverlee, BE;
Doris Schmitt-landsiedel, Ottobrunn, DE;
Juergen Holz, Dresden, DE;
Ronald Kakoschke, Munich, DE;
Thomas Nirschl, Essex Junction, VT (US);
Christian Pacha, Munich, DE;
Klaus Schruefer, Baldham, DE;
Thomas Schulz, Heverlee, BE;
Doris Schmitt-Landsiedel, Ottobrunn, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD) in comparison with other transistors (T) on the same integrated circuit arrangement (). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D, S) of the tunnel field effect transistor.