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For the Inventor, By the Inventor

Ottobrunn, Germany

Doris Schmitt-Landsiedel

USPTO Granted Patents = 32

Average Co-Inventor Count = 3.8

ph-index = 11

Forward Citations = 450(Granted Patents)


Location History:

  • Munich, DE (1986 - 1987)
  • Ottobrun, DE (2000)
  • Ottobrunn, DE (1991 - 2015)

Company Filing History:

goldMedal21 out of 30,028 
 
Siemens Aktiengesellschaft
 patents
silverMedal10 out of 14,705 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 34 
 
Technische Universitaet Muenchen
 patents

Years Active: 1986-2015

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32 patents (USPTO):
1. 9219063 - Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor (2015-12-22),
2. 8872547 - Nanomagnetic logic gate and an electronic device (2014-10-28),
3. 8629500 - Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor (2014-01-14),
4. 7757109 - Circuit arrangement for activating a circuit block and method for the same (2010-07-13),
5. 7679963 - Integrated circuit having a drive circuit (2010-03-16),
6. 7471580 - Flip-flop with additional state storage in the event of turn-off (2008-12-30),
7. 7427882 - Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuit (2008-09-23),
8. 7411423 - Logic activation circuit (2008-08-12),
9. 7099218 - Differential current evaluation circuit and sense amplifier circuit for evaluating a memory state of an SRAM semiconductor memory cell (2006-08-29),
10. 6700149 - Circuit configuration for forming a MOS capacitor with a lower voltage dependence and a lower area requirement (2004-03-02),
11. 6323728 - Data carrier for the contactless reception of amplitude-modulated signals (2001-11-27),
12. 6181183 - Steep edge time-delay relay (2001-01-30),
13. 6138227 - Device for the jump-like addressing of specific lines of a serially (2000-10-24),
14. 6097661 - Pointer circuit with low surface requirement high speed and low power (2000-08-01),
15. 6037885 - Digital/analog converter using a floating gate MOS neuron transistor (2000-03-14),

Title: The Innovative Mind of Doris Schmitt-Landsiedel

Introduction:

Doris Schmitt-Landsiedel is a pioneering inventor based in Ottobrunn, Germany. With an impressive portfolio of 32 patents, she has made significant contributions to the field of integrated circuits and nanomagnetic logic gates.

Latest Patents:

Among her latest patents is an integrated circuit arrangement comprising a field effect transistor, particularly a tunnel field effect transistor. This innovation highlights Schmitt-Landsiedel's expertise in developing transistors with unique gate dielectrics and configurations for enhanced performance. Additionally, her work on nanomagnetic logic gates and electronic devices showcases her ingenuity in leveraging magnetic properties for advanced computing systems.

Career Highlights:

Having worked at esteemed companies like Siemens AG and Infineon Technologies, Schmitt-Landsiedel has gained invaluable experience in the semiconductor industry. Her innovative spirit and dedication to pushing the boundaries of technology have earned her recognition as a leading figure in the field of electronics and semiconductor design.

Collaborations:

Throughout her career, Schmitt-Landsiedel has collaborated with talented individuals such as Roland Thewes and Michael Bollu. These partnerships have proven to be instrumental in bringing her innovative ideas to fruition and advancing the field of semiconductor engineering.

Conclusion:

In conclusion, Doris Schmitt-Landsiedel stands out as a trailblazing inventor who continues to drive advancements in the realm of integrated circuits and nanotechnology. Her relentless pursuit of innovation and collaboration with industry experts underscores her commitment to shaping the future of technology.

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