The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Aug. 13, 2004
Ronald Kakoschke, Munich, DE;
Thomas Nirschl, Loiching, DE;
Danny Shum, Poughkeepsie, NY (US);
Klaus Schrüfer, Baldham, DE;
Ronald Kakoschke, Munich, DE;
Thomas Nirschl, Loiching, DE;
Danny Shum, Poughkeepsie, NY (US);
Klaus Schrüfer, Baldham, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A memory device using tunneling field effect transistors (TFET) and buried bit lines is presented. The memory device includes a matrix containing rows and columns of storage cells. Each storage cell contains at least one cell transistor, which in turn contains first doped regions and second doped regions, one of which is a source and the other a drain. The memory device includes word lines, each of which is connected to storage cells of one row and bit lines, each of which is connected to storage cells of one column. The first doped regions are of a different doping type than the second doped regions.