The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Mar. 21, 2011
Ronald Kakoschke, Munich, DE;
Thomas Nirschl, Loiching, DE;
Danny Shum, Poughkeepsie, NY (US);
Klaus Schrüfer, Baldham, DE;
Ronald Kakoschke, Munich, DE;
Thomas Nirschl, Loiching, DE;
Danny Shum, Poughkeepsie, NY (US);
Klaus Schrüfer, Baldham, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of fabricating a memory device in a semiconductor substrate, the device having a memory array having a plurality of memory cell transistors arranged in rows and columns. The method includes forming a plurality of tunneling field effect transistors, forming a first well of the second doping type, forming a second well of the first doping type surrounding the first well, forming a first word line connected to a first row of memory cell transistors, forming a first bit line to control a voltage of doped drain regions of tunneling field effect transistors of a first column of memory cell transistors, and forming a second bit line parallel to the first bit line.