Enter inventor name

Robert Christopher Bowen

USPTO Granted Patents = 28 (Patent Applications = 1)

Average Co-Inventor Count = 3.3

ph-index = 9

Forward Citations = 443(Granted Patents)

Location History:

Allen, TX (US) (2005 - 2006)
Lucas, TX (US) (2007 - 2009)
Mount Laurel, NJ (US) (2011 - 2018)
Austin, TX (US) (2015 - 2019)

Company Filing History:

21 out of 131,744

Samsung Electronics Co., Ltd.

patents

7 out of 29,279

Texas Instruments Corporation

patents

Years Active: 2005-2019

Loading Chart...

28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10283638 - Structure and method to achieve large strain in NS without addition of stack-generated defects (2019-05-07),

2. 10170549 - Strained stacked nanosheet FETs and/or quantum well stacked nanosheet (2019-01-01),

3. 10147793 - FinFET devices including recessed source/drain regions having optimized depths (2018-12-04),

4. 9917158 - Device contact structures including heterojunctions for low contact resistance (2018-03-13),

5. 9831323 - Structure and method to achieve compressively strained Si NS (2017-11-28),

6. 9793403 - Multi-layer fin field effect transistor devices and methods of forming the same (2017-10-17),

7. 9716176 - FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same (2017-07-25),

8. 9711414 - Strained stacked nanosheet FETS and/or quantum well stacked nanosheet (2017-07-18),

9. 9685509 - Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions (2017-06-20),

10. 9647098 - Thermionically-overdriven tunnel FETs and methods of fabricating the same (2017-05-09),

11. 9613907 - Low resistivity damascene interconnect (2017-04-04),

12. 9583590 - Integrated circuit devices including FinFETs and methods of forming the same (2017-02-28),

13. 9570609 - Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same (2017-02-14),

14. 9525053 - Integrated circuit devices including strained channel regions and methods of forming the same (2016-12-20),

15. 9461114 - Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same (2016-10-04),

Title: The Innovative Journey of Robert Christopher Bowen

Introduction:

Robert Christopher Bowen, a visionary inventor based in Austin, Texas, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Robert Bowen's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

With over two decades of experience in the tech industry, Robert Bowen has a proven track record of transforming innovative ideas into tangible solutions. His work has revolutionized various sectors, from healthcare to sustainable energy.

Collaborations:

Throughout his career, Robert Bowen has collaborated with leading research institutions, universities, and tech companies to push the boundaries of technological advancement. His partnerships have led to the development of groundbreaking products that have changed the way we live and work.

Conclusion:

In conclusion, Robert Christopher Bowen's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His dedication to creating a better future through technology continues to inspire generations of inventors and entrepreneurs.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com