The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Nov. 06, 2014
Applicants:
Mark S. Rodder, Dallas, TX (US);
Borna J. Obradovic, Leander, TX (US);
Robert C. Bowen, Austin, TX (US);
Inventors:
Mark S. Rodder, Dallas, TX (US);
Borna J. Obradovic, Leander, TX (US);
Robert C. Bowen, Austin, TX (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01);
Abstract
FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of the channel fin, and a drain region on the bottom semiconductor layer and adjacent a second side of the channel fin opposite the first side.