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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9831323 B1

PDFFull Text
Date of Patent:
Nov. 28, 2017

Filed:

Sep. 15, 2016

Structure and method to achieve compressively strained si ns

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jorge A. Kittl, Round Rock, TX (US);

Ganesh Hegde, Austin, TX (US);

Robert Christopher Bowen, Austin, TX (US);

Borna J. Obradovic, Leander, TX (US);

Mark S. Rodder, Dallas, TX (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., , KR;

Attorney:

Renaissance IP Law Group LLP

Primary Examiner:

Evan Pert

Assistant Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/201 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/04 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/02439 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 29/0673 (2013.01); H01L 29/6653 (2013.01); H01L 29/66553 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01); H01L 21/0245 (2013.01); H01L 21/02447 (2013.01); H01L 21/02485 (2013.01); H01L 21/0475 (2013.01); H01L 21/30604 (2013.01); H01L 21/465 (2013.01);
Abstract

A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; and at least one channel layer that has a second lattice parameter in which the first lattice parameter is less than or equal to the second lattice parameter, and each channel layer is disposed between and in contact with two sacrificial layers and includes a compressive strain or a neutral strain based on a difference between the first lattice parameter and the second lattice parameter.

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