The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Nov. 25, 2015
Borna J. Obradovic, Leander, TX (US);
Ryan Hatcher, Austin, TX (US);
Robert C. Bowen, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
Borna J. Obradovic, Leander, TX (US);
Ryan Hatcher, Austin, TX (US);
Robert C. Bowen, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
Abstract
A device may include a nanosheet field effect transistor (FET) that may include a substrate, a well that is doped with impurities at a surface of the substrate, a channel including a plurality of stacked nanosheets, a gate, a conductive material, and an isolation layer. Ones of the plurality of stacked nanosheets may include a semiconductor material that may be doped with impurities of the same conductivity type as the impurities of the well. The conductive material may be adjacent the plurality of nanosheets and may electrically connect ones of the plurality of nanosheets to the well. The isolation layer may electrically insulate the well from the workfunction metal.