The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Nov. 16, 2015
Applicants:

Jorge A. Kittl, Round Rock, TX (US);

Borna Josip Obradovic, Leander, TX (US);

Robert Christopher Bowen, Austin, TX (US);

Mark S. Rodder, Dallas, TX (US);

Inventors:

Jorge A. Kittl, Round Rock, TX (US);

Borna Josip Obradovic, Leander, TX (US);

Robert Christopher Bowen, Austin, TX (US);

Mark S. Rodder, Dallas, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/267 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/28575 (2013.01); H01L 29/0847 (2013.01); H01L 29/452 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor material and at least one heterojunction located between the metal contact and the channel region, wherein the heterojunction forms a band-edge offset for the majority carrier that is less than or equal to about 0.2 eV.


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