The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Mar. 27, 2014
Borna J. Obradovic, Leander, TX (US);
Mark S. Rodder, Dallas, TX (US);
Jorge A. Kittl, Round Rock, TX (US);
Robert C. Bowen, Mount Laurel, NJ (US);
Ryan M. Hatcher, Swarthmore, PA (US);
Borna J. Obradovic, Leander, TX (US);
Mark S. Rodder, Dallas, TX (US);
Jorge A. Kittl, Round Rock, TX (US);
Robert C. Bowen, Mount Laurel, NJ (US);
Ryan M. Hatcher, Swarthmore, PA (US);
Abstract
A finFET device can include a source/drain contact recess having an optimal depth beyond which an incremental decrease in a spreading resistance value for a horizontal portion of a source/drain contact in the recess provided by increased depth may be less than an incremental increase in total resistance due to the increase in the vertical portion of the source/drain contact at the increased depth.