The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Mar. 26, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jorge A. Kittl, Round Rock, TX (US);
Mark S. Rodder, Dallas, TX (US);
Robert C. Bowen, Mount Laurel, NJ (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/66522 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A finFET device can include a high mobility semiconductor material in a fin structure that can provide a channel region for the finFET device. A source/drain recess can be adjacent to the fin structure and a graded composition epi-grown semiconductor alloy material, that includes a component of the high mobility semiconductor material, can be located in the source/drain recess.
Kittl, Jorge. (2017). Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions (U.S. Patent No. 9685509). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9685509
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile