The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Feb. 26, 2016
Borna J. Obradovic, Leander, TX (US);
Robert C. Bowen, Austin, TX (US);
Titash Rakshit, Austin, TX (US);
Wei-e Wang, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
Borna J. Obradovic, Leander, TX (US);
Robert C. Bowen, Austin, TX (US);
Titash Rakshit, Austin, TX (US);
Wei-E Wang, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Multi-layer fin field effect transistor devices and methods of forming the same are provided. The devices may include a fin shaped channel structure on a substrate. The channel structure may include stressor layers stacked on the substrate and a channel layer between the stressor layers, and the stressor layers may include a semiconductor material having a wide bandgap that is sufficient to confine carriers to the channel layer and having a lattice constant different from a lattice constant of the channel layer to induce stress in the channel layer. The devices may also include source/drain regions on respective first opposing sides of the channel structure and a gate on second opposing sides of the channel structure and between the source/drain regions.