Kessel-lo, Belgium

Rita Rooyackers

This inventor holds 16 USPTO granted patents and 1 published patent application and 6 EPO patents, primarily in Semiconductor Technology. Top assignees: Imec Vzw, Katholieke Universiteit Leuven, Stmicroelectronics (Crolles 2) Sas. Active years: 2000-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rita Rooyackers. Retrieved from https://idiyas.com/inventor/rita-rooyackers

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 93.8

 

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 148(Granted Patents)


Location History:

  • Leuven, BE (2000 - 2013)
  • Kessel-lo, BE (2009 - 2019)

Company Filing History:


Years Active: 2000-2019

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Areas of Expertise:
Semiconductor Materials
Transistor Structure
Tunnel Field-Effect Transistor
Quantum Dots
Selective Epitaxial Growth
Chemical Mechanical Polishing
Strained Multi-Gate Transistor
High-K Dielectric
Logical Gates
Static Random-Access Memory
Etching Process
Nanowire Transistor
16 patents (USPTO):Explore Patents

Title: Innovations in Semiconductor Technology: The Contributions of Rita Rooyackers

Introduction

Rita Rooyackers, a distinguished inventor based in Kessel-Lo, Belgium, has made significant advancements in semiconductor technology, holding an impressive portfolio of 16 patents. Her innovations focus on methods for forming complex semiconductor structures, contributing to the progression of microelectronics.

Latest Patents

Among her recent patents, one notable invention is the method for the monolithic integration of semiconductor materials. This method presents a novel approach to forming a semiconductor structure by bonding a donor substrate to a carrier substrate. The process involves removing parts of the donor substrate to expose specific semiconductor layers, ultimately leading to the creation of a second semiconductor device from the modified layers.

Another significant patent is a method for forming a transistor structure that features a fin-shaped channel structure. This method outlines the procedures for providing a layer stack within a trench, exposing certain portions of the stack, and strategically recessing surrounding structures to enable the creation of a freestanding upper and lower part of the layer stack.

Career Highlights

Rita's career has seen her contribute to leading institutions in the field, such as Imec and the Interuniversity Microelectronics Centre. Her work at these organizations has been pivotal in advancing semiconductor research and development, particularly in compact and efficient chip designs.

Collaborations

Throughout her career, Rita has collaborated with notable professionals such as Anne S. Verhulst and Nadine Collaert. These partnerships have led to fruitful research endeavors that strive to push the boundaries of semiconductor technology, highlighting the importance of teamwork in innovation.

Conclusion

Rita Rooyackers stands out as an influential figure in the realm of semiconductor technology. Her extensive patent portfolio and collaborative efforts with esteemed colleagues reflect her dedication to advancing the field. With her innovations, Rita continues to contribute to the future of microelectronics, paving the way for the next generation of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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