The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Apr. 08, 2011
Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device
Rita Rooyackers, Kessel-lo, BE;
Daniele Leonelli, Leuven, BE;
Anne Vandooren, Mazy, BE;
Anne S. Verhulst, Houtvenne, BE;
Roger Loo, Kessel-lo, BE;
Stefan DE Gendt, Wijnegem, BE;
Rita Rooyackers, Kessel-lo, BE;
Daniele Leonelli, Leuven, BE;
Anne Vandooren, Mazy, BE;
Anne S. Verhulst, Houtvenne, BE;
Roger Loo, Kessel-lo, BE;
Stefan De Gendt, Wijnegem, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, K.U. Leuven R&D, Leuven, BE;
Abstract
The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs.