The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Jun. 27, 2002
Rita Rooyackers, Leuven, BE;
Rita Rooyackers, Leuven, BE;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Abstract
The present invention is related to a method for producing semiconductor devices from a semiconductor substrate, comprising providing a substrate having on its surface a number of elevated areas separated by areas which are at a lower level. Each elevated area has at its top surface a first layer of a material which is resistant to Chemical Mechanical Polishing (CMP). The method further comprises depositing a layer of a dielectric on top of the whole of said substrate, thereby filling the gaps between said elevated areas. The method further comprises depositing a second layer of a material which is resistant to CMP on top of the whole of said substrate. The method further comprises removing parts of the second CMP resistant layer and of dielectric layer. The method further comprises performing a CMP step and terminating the CMP step at the location of said first and second CMP resistant layers.