The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Oct. 30, 2002
Malgorzata Jurczak, Leuven, BE;
Rita Rooyackers, Leuven, BE;
Emmanuel Augendre, Leuven, BE;
Goncal Badenes, Sabadell, ES;
Malgorzata Jurczak, Leuven, BE;
Rita Rooyackers, Leuven, BE;
Emmanuel Augendre, Leuven, BE;
Goncal Badenes, Sabadell, ES;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Abstract
A method of forming layers, in the same device material, with different thickness or layer height in a semiconductor device comprises forming device material layer or gate electrode layer disposable parts in selected regions of the device layer. The disposable parts can be formed by doping the selected regions to the desired depth d. The as-deposited thickness t of this device layer can be adjusted or modulated after the patterning of the individual devices by removing the disposable parts.