Leuven, Belgium

Emmanuel Augendre

This inventor holds 1 USPTO granted patent. Top assignee: Imec Vzw. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Emmanuel Augendre. Retrieved from https://idiyas.com/inventor/emmanuel-augendre-dn4qqhjj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Emmanuel Augendre: Innovator in Semiconductor Technology

Introduction

Emmanuel Augendre is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Emmanuel Augendre holds a patent for a "Semiconductor device with selectable gate thickness and method of manufacturing such devices." This patent describes a method of forming layers with different thicknesses in a semiconductor device. The process involves creating disposable parts in selected regions of the device layer, which can be adjusted or modulated after the patterning of the individual devices by removing these parts.

Career Highlights

Emmanuel Augendre is associated with the Interuniversitair Microelektronica Centrum, commonly known as imec. His work at this prestigious research institution has allowed him to explore and develop advanced semiconductor technologies.

Collaborations

Some of his notable coworkers include Malgorzata Jurczak and Rita Rooyackers, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Emmanuel Augendre's contributions to semiconductor technology through his innovative patent highlight his role as a key inventor in this domain. His work continues to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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