The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Aug. 31, 2015
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Anne S. Verhulst, Houtvenne, BE;
Geoffrey Pourtois, Villers-la-Ville, BE;
Rita Rooyackers, Kessel-lo, BE;
Assignee:
IMEC VZW, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/94 (2006.01); H01L 29/772 (2006.01); H01L 29/775 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/205 (2013.01); H01L 29/7391 (2013.01); H01L 29/78 (2013.01); H01L 29/66356 (2013.01);
Abstract
A Tunnel Field-Effect Transistor (TFET) device is provided comprising at least one heterosection between the source region and the channel region. The at least one heterosection has a low dielectric constant and thickness below 10 nm. Additionally a pocket region and another heterosection may be added in between the at least one heterosection and the channel region.