The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Aug. 16, 2012
Marc Heyns, Leuven, BE;
Cedric Huyghebaert, Leuven, BE;
Anne S. Verhulst, Leuven, BE;
Daniele Leonelli, Leuven, BE;
Rita Rooyackers, Leuven, BE;
Wim Dehaene, Leuven, BE;
Marc Heyns, Leuven, BE;
Cedric Huyghebaert, Leuven, BE;
Anne S. Verhulst, Leuven, BE;
Daniele Leonelli, Leuven, BE;
Rita Rooyackers, Leuven, BE;
Wim Dehaene, Leuven, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, K.U. Leuven R&D, Leuven, BE;
Abstract
A tunnel transistor is provided including a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part.