The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Oct. 30, 2008
Rita Rooyackers, Kessel-lo, BE;
Frederik Leys, Gentbrugge, BE;
Axel Nackaerts, Haasrode, BE;
IMEC, Leuven, BE;
Abstract
A method for forming at least one quantum dot at at least one predetermined location on a substrate is disclosed. In one aspect, the method comprises providing a layer of semiconductor material on an insulating layer on the substrate. The layer of semiconductor material is patterned so as to provide at least one line of semiconductor material having a width (w) and having a local width variation at at least one predetermined location where the at least one quantum dot has to be formed. The local width variation has an amplitude (A) of between about 20 nm and 35 nm higher than the width wof the at least one line. The at least one line is patterned to form at least one quantum dot. A design for a lithographic mask for use with the method and a method for making such a design are also disclosed.